Biography

Aurélien Lecavelier des Etangs-Levallois received the master of research degree in nanomaterials from the Imperial College London in 2004. He also graduated from the French engineering school Ecole des Mines de Nancy in 2004. He then joined the Silicon Microelectronics group at the Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN) in 2009 as a Ph.D. student. His research work mainly focuses on high frequency flexible electronics.

Research Projects

Very high frequency, mechanically flexible and performance stable integrated electronics based on SOI-CMOS transfer bonding on plastic substrates.

High frequency flexible electronics chartThe ability to realize flexible circuits integrating sensing, signal processing, and communicating capabilities is of central importance for the development of numerous nomadic applications requiring foldable, stretchable and large area electronics. A large number of these applications currently rely on organic electronics, or integrate high mobility active films on plastic foils to provide higher performance. A key challenge is however the combination of high electrical performance (i.e. millimeter wave, low noise electronics), with the mechanical flexibility required to adapt to curvilinear surfaces, in addition to high stability of these electrical performance upon deformation.

In this work, a solution has been developed, based on thinning and transfer onto plastic foil of high frequency (HF) CMOS devices initially patterned on conventional silicon-on-insulator (SOI) wafers.

  TEM cross-section of a flexible MOSFETTEM cross-section of a flexible MOSFET

 

 

 

 

 

Current gain H21

This process enables the fabrication of high performance electronics on plastic, with n-MOSFETs featuring characteristic frequencies fT/fmax as high as 150/160GHz in addition to low noise potentialities: NFmin/Ga of 0.57/17.8dB.

Noise figures of meritNoise figures of merit

 

 

 

 

 

 

 

Secondly, by locating the neutral plane of the flexible system in its active layer, the relative variation of these high frequency figures-of-merit can be limited to 5% even after aggressive bending, demonstrating mechanical flexibility, high electrical performance and stability upon deformation.

 

LIST OF PUBLICATIONS

International journal papers

2013

A. Lecavelier des Etangs-Levallois, Z. Chen, M. Lesecq, S. Lepilliet, Y. Tagro, F. Danneville, J.-F. Robillard, V. Hoel, D. Troadec, D. Gloria, C. Raynaud, J. Ratajczak, and E. Dubois, A converging route towards very high frequency, mechanically flexible and performance stable integrated electronics, to appear in Journal of Applied Physics.

A. Lecavelier des Etangs-Levallois, E. Dubois, M. Lesecq, F. Danneville, Y. Tagro, S. Lepilliet, D. Gloria and C. Raynaud, Radio Frequency and low Noise Characteristics of SOI Technology on Plastic for Flexible Electronics, to appear in Solid State Elec. (2013) DOI: 10.1016/j.sse.2013.02.049

N. Defrance, Y. Douvry, M. Lesecq, F. Lecourt, V. Hoel, A. Lecavelier des Etangs-Levallois, Y. Cordier, A. Ebongue, J.C. De Jaeger, Fabrication, characterization and physical analysis of AlGaN/GaN HEMTs on flexible substrates, IEEE Trans. On Elec. Dev. 60 (3), 1054-1059 (Mar. 2013) DOI: 10.1109/TED.2013.2238943

2012

Y. Tagro, A. Lecavelier des Etangs-Levallois, L. Poulain, S. Lepilliet, D. Gloria, C. Raynaud, E. Dubois, and F. Danneville, High Frequency Noise Potentialities of Reported CMOS 65 nm SOI Technology on Flexible Substrate, 2012 IEEE 12th Topical Meeting on Silicon Monolithic IC in RF Systems, 89-92 (2012) DOI: 10.1109/SiRF.2012.6160147

2011

A. Lecavelier des Etangs-Levallois, E. Dubois, M. Lesecq, F. Danneville, L. Poulain, Y. Tagro, S. Lepilliet, D. Gloria, C. Raynaud, and D. Troadec, 150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate, IEEE Elec. Dev. Lett. 32 (11), 1510-1512 (Nov. 2011) DOI: 10.1109/LED.2011.2166241

X. Tang, C. Krzeminski, A. Lecavelier des Etangs-Levallois, Z. Chen, E. Dubois, E. Kasper, A. Karmous, N. Reckinger, D. Flandre, L. A. Francis, J.-P. Colinge, and J.-P. Raskin, Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories, Nano Lett. 11, 4520-4526 (Oct. 2011) DOI: 10.1021/nl202434k

M. Lesecq, V. Hoel, A. Lecavelier des Etangs-Levallois, E. Pichonat, Y. Douvry, and J. C. De Jaeger, High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape, IEEE Elec. Dev. Lett. 32 (2), 143-145 (Feb. 2011) DOI: 10.1109/LED.2010.2091251

International conferences

2012

Aurélien Lecavelier des Etangs-Levallois, Vikram Passi, Zhenkun Chen, François Morini, and Emmanuel Dubois, Characterization of PtSi nanowires transferred onto organic film, 38th International Conference on Micro and Nano Engineering (MNE 2012), 16-20 January 2012, Toulouse, France (ORAL presentation).

Vikram Passi, Aurélien Lecavelier des Etangs-Levallois, Zhenkun Chen et Emmanuel Dubois, Room temperature process for direct writing of nanostructures on plastic, 38th International Conference on Micro and Nano Engineering (MNE 2012), 16-20 January 2012, Toulouse, France (POSTER presentation).

A. Lecavelier des Etangs-Levallois, E. Dubois, M. Lesecq, F. Danneville, Y. Tagro, S. Lepilliet, D. Gloria, and C. Raynaud, Radio Frequency and low Noise Characteristics of SOI Technology on Plastic for Flexible Electronics, 8th Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EuroSOI 2012), 23-25 January 2012, Montpellier, France (ORAL presentation).

Y. Tagro, A. Lecavelier des Etangs-Levallois, L. Poulain, S. Lepilliet, D. Gloria, C. Raynaud, E. Dubois, and F. Danneville, High Frequency Noise Potentialities of Reported CMOS 65 nm SOI Technology on Flexible Substrate, 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 16-18 January 2012, Santa Clara, CA, USA (POSTER presentation)

2010

M. Lesecq, V. Hoel, A. Lecavelier des Etangs-Levallois, E. Pichonat, J.C. De Jaeger, Y. Douvry, F. Lecourt, A. Ebongue, Y. Cordier, AlGaN/GaN HEMTs reported on flexible polyimide substrate, 5th Space Agency – MOD Round Table Workshop on GaN Component Technologies, 2-3 September 2010, Noorwijk, The Netherlands, pp. 9-12

National conference

2010

A. Lecavelier des Etangs-Levallois, E. Dubois, F. Danneville, D. Gloria, and C. Raynaud, Report hétérogène de dispositifs et circuits CMOS RF sur substrat souple, Journées National du Réseau Doctoral en Microélectronique (JNRDM), 7-9 June 2010, Montpellier, France (ORAL presentation).

Patent

A. Lecavelier des Etangs-Levallois, E. Dubois, F. Danneville, D. Gloria, and C. Raynaud, Dispositifs et circuits semiconducteurs sur substrat flexible aux propriétés électriques invariantes sous application de déformations mécaniques, to be published

Contact Information

IEMN – Cité Scientifique – Avenue Poincaré – 59652 VILLENEUVE D’ASCQ CEDEX

Office 218

Tel.: +33 320 197 975

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