– – – – 2009 – – – –

Articles

  1. A simple method for measuring Si-Fin sidewall roughness by AFM
    TANG X.H., BAYOT V., RECKINGER N., FLANDRE D., RASKIN J.P., DUBOIS E., NYSTEN B., , , , , , , ,
    IEEE Trans. Nanotechnol., 8, 5 (2009) 611-616
    doi: 10.1109/TNANO.2009.2021064
  2. An all-digital RF signal generator using high-speed ΔΣ modulators
    FRAPPE A., FLAMENT A., STEFANELLI B., KAISER A., CATHELIN A., , , , , , , , , ,
    IEEE J. Solid-State Circuits, 44, 10 (2009) 2722-2732
    doi: 10.1109/JSSC.2009.2028406
  3. An electrical evaluation method for the silicidation of silicon nanowires
    TANG X., RECKINGER N., BAYOT V., FLANDRE D., DUBOIS E., YAREKHA D.A., LARRIEU G., LECESTRE A., RATAJCZAK J., BREIL N., PASSI V., RASKIN J.P.
    Appl. Phys. Lett., 95, 2 (2009) 023106-1-3
    doi: 10.1063/1.3171929
  4. Arsenic-segregated rare-earth silicide junctions: reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI
    LARRIEU G., YAREKHA D.A., DUBOIS E., BREIL N., FAINOT O., , , , , , , , , ,
    IEEE Electron Device Lett., 30, 12 (2009) 1266-1268
    doi: 10.1109/LED.2009.2033085
  5. Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research
    PASCUAL E., MARTIN M.J., RENGEL R., LARRIEU G., DUBOIS E., , , , , , , , , ,
    Semicond. Sci. Technol., 24, 2 (2009) 025022-1-6
    doi: 10.1088/0268-1242/24/2/025022
  6. Molecular dynamics simulations of the solid phase epitaxy of Si : growth mechanism and orientation effects
    LAMPIN E., KRZEMINSKI C., , , , , , , , , , , , ,
    J. Appl. Phys., 106, 6 (2009) 063519-1-8
    doi: 10.1063/1.3211972
  7. Optimization of RF performance of metallic source/drain SOI MOSFETs using dopant segregation at the Schottky interface
    VALENTIN R., DUBOIS E., LARRIEU G., RASKIN J.P., DAMBRINE G., BREIL N., DANNEVILLE F., , , , , , , ,
    IEEE Electron Device Lett., 30, 11 (2009) 1197-1199
    doi: 10.1109/LED.2009.2031254
  8. Process optimization and downscaling of a single electron single dot memory
    KRZEMINSKI C., TANG X., RECKINGER N., BAYOT V., DUBOIS E.
    IEEE Trans. Nanotechnol., 8, 6 (2009) 737-748
    doi: 10.1109/TNANO.2009.2021653
  9. Reconfigurable complex digital delta-sigma modulator synthesis for digital wireless transmitters
    NZEZA C.N., KAISER A., CATHELIN A.
    Rev. Roum. Sci. Tech.-Ser. Electro., 54, 4 (2009) 385-394
    http://www.revue.elth.pub.ro/index.php?action=details&id=197
  10. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
    RECKINGER N., TANG X.H., BAYOT V., YAREKHA D.A., DUBOIS E., GODEY S., WALLART X., LARRIEU G., LASZCZ A., RATAJCZAK J., JACQUES P.J., RASKIN J.P., , ,
    Appl. Phys. Lett., 94, 19 (2009) 191913-1-3
    doi: 10.1063/1.3136849

Conferences

  1. A 60GHz 65nm CMOS RMS power detector for antenna impedance mismatch detection
    GORISSE J., CATHELIN A., KAISER A., KERHERVE E.
    35th European Solid-State Circuits Conference, ESSCIRC 2009, Athens, Greece, september 14-18
    (2009) 172-175, ISBN 978-1-4244-4354-3
    doi: 10.1109/ESSCIRC.2009.5326027
  2. A combined 4-bit quadrature digital-to-analog converter/mixer for millimeter-wave applications
    FLAMENT A., LOMBARD P., STEFANELLI B., CATHELIN A., KAISER A.
    16th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2009, Hammamet, Tunisia, december 13-16
    (2009) 964-967, ISBN 978-1-4244-5090-9
    doi: 10.1109/ICECS.2009.5410814
  3. A digital cartesian feedback path design for 2.4GHz ISM band standards
    ZELENY J., WURM P., VINCENT P., KAISER A.
    16th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2009, Hammamet, Tunisia, december 13-16
    (2009) 523-526, ISBN 978-1-4244-5090-9
    doi: 10.1109/ICECS.2009.5410877
  4. Automated identification of clusters and UWB channel parameters dependency on Tx-Rx distance
    MASSOURI A., CHEN J., CLAVIER L., COMBEAU P., POUSSET Y.
    3rd European Conference on Antennas and Propagation, EuCAP 2009, Berlin, Germany, march 23-27
    (2009) 3663-3667, ISBN 978-1-4244-4753-4
    http://ieeexplore.ieee.org/search/searchresult.jsp?arnumber=5068385
  5. Complete BAW filtered CMOS 90nm digital RF signal generator
    FLAMENT A., GIRAUD S., BILA S., CHATRAS M., FRAPPE A., STEFANELLI B., KAISER A., CATHELIN A.
    Joint IEEE North-East Workshop on Circuits and Systems and TAISA Conference, NEWCAS-TAISA'09, Toulouse, France, june 28-july 1
    (2009) 43-46, ISBN 978-1-4244-4573-8
    doi: 10.1109/NEWCAS.2009.5290423
  6. Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate
    LECESTRE A., DUBOIS E., VILLARET A., CORONEL P., SKOTNICKI T., DELILLE D., MAURICE C., TROADEC D., , , , , , ,
    European Materials Research Society Spring Meeting, E-MRS Spring 2009, Symposum K : Semiconductor nanostructures towards electronic and optoelectronic device applications II, Strasbourg, France, june 8-12
    IOP Conf. Series : Mater. Sci. Eng., 6, 1 (2009) 012022-1-6
    doi: 10.1088/1757-899X/6/1/012022
  7. Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs
    LARRIEU G., YAREKHA D.A., DUBOIS E., DERESMES D., BREIL N., RECKINGER N., TANG X., HALIMAOUI A.
    215th ECS Meeting , Silicon-on-Insulator Technology and Devices, San Francisco, CA, USA, may 24-29
    ECS Trans., 19, 4 (2009) 201-207, non réferencé dans ISI Web of Knowledge
    doi: 10.1149/1.3117410
  8. TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs
    RATAJCZAK J., LASZCZ A., CZERWINSKI A., KATCKI J., TANG X., RECKINGER N., YAREKHA D.A., LARRIEU G., DUBOIS E., , , , , ,
    3rd National Conference on Nanotechnology, NANO'2009, Warsaw, Poland, june 22-26
    Acta Phys. Pol. A, 116, supplement (2009) 89-91
    http://przyrbwn.icm.edu.pl/APP/ABSTR/116/a116-s-23.html
  9. UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET
    YAREKHA D.A., LARRIEU G., BREIL N., DUBOIS E., GODEY S., WALLART X., SOYER C., REMIENS D., RECKINGER N., TANG X., LASZCZ A., RATAJCZAK J., HALIMAOUI A., ,
    215th ECS Meeting , Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS, San Francisco, CA, USA, may 24-29
    ECS Trans., 19, 1 (2009) 339-344
    doi: 10.1149/1.3118961
  10. Characterization of ytterbium silicide formed in ultra high vacuum
    LASZCZ A., RATAJCZAK J., CZERWINSKI A., KATCKI J., SROT V., PHILLIPP F., VAN AKEN P.A., YAREKHA D., RECKINGER N., LARRIEU G., DUBOIS E., , , ,
    16th International Conference on Microscopy of Semiconducting Materials, MSM XVI, Oxford, UK, march 17-20
    J. Phys. : Conf. Ser., 209, 1 (2010) 012056-1-4
    doi: 10.1088/1742-6596/209/1/012056
  11. Confined VLS growth and structural characterization of silicon nanoribbons
    LECESTRE A., DUBOIS E., VILLARET A., SKOTNICKI T., CORONEL P., PATRIARCHE G., MAURICE C., , , , , , , ,
    35th International Conference on Micro & Nano Engineering, MNE 2009, Ghent, Belgium, september 28-october 1
    Microelectron. Eng., 87, 5-8 (2010) 1522-1526
    doi: 10.1016/j.mee.2009.11.053
  12. Realization of vertical silicon nanowire networks with an ultra high density using a top-down approach
    HAN X.L., LARRIEU G., DUBOIS E., , , , , , , , , , , ,
    International Conference on Nanoscience and Technology, ChinaNANO 2009, Beijing, China, september 1-3
    J. Nanosci. Nanotechnol., 10, 11 (2010) 7423-7427
    doi: 10.1166/jnn.2010.2841

– – – – 2008 – – – –

Articles

  1. Automatic DC operating point computation and design plan generation for analog IPs
    ISKANDER R., LOUERAT M.M., KAISER A., , , , , , , , , , , ,
    Analog Integr. Circuits Process., 56, 1-2 (2008) 93-105
    doi: 10.1007/s10470-007-9075-3
  2. Characterization of ultrathin SOI film and application to short channel MOSFETs
    TANG X., RECKINGER N., LARRIEU G., DUBOIS E., FLANDRE D., RASKIN J.P., NYSTEN B., JONAS A.M., BAYOT V., , , , , ,
    Nanotechnology, 19, 16 (2008) 165703-1-7
    doi: 10.1088/0957-4484/19/16/165703
  3. Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance
    LARRIEU G., DUBOIS E., YAREKHA D., BREIL N., RECKINGER N., TANG X., RATAJCZAK J., LASZCZ A., , , , , , ,
    Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 154-155 (2008) 159-162
    doi: 10.1016/j.mseb.2008.10.014
  4. Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process
    BREIL N., DUBOIS E., HALIMAOUI A., POUYDEBASQUE A., LARRIEU G., LASZCZ A., RATAJCAK J., SKOTNICKI T., , , , , , ,
    IEEE Electron Device Lett., 29, 2 (2008) 152-154
    doi: 10.1109/LED.2007.914090
  5. Low Sclottk{ rarrier height for ErSi2-x/n-Si contacts formed with a Ti cap
    RECKINGER N., TANG X., BAYOT V., YAREKHA D.A., DUBOIS E., GODEY S., WALLART X., LARRIEU G., LASZCZ A., RATAJCZAK J., JACQUES P.J., RASKIN J.P., , ,
    J. Appl. Phys., 104, 10 (2008) 103523-1-9
    doi: 10.1063/1.3010305
  6. RF small signal analysis of Schottky-barrier p-MOSFETs
    VALENTIN R., DUBOIS E., RASKIN J.P., LARRIEU G., DAMBRINE G., LIM T.C., BREIL N., DANNEVILLE F., , , , , , ,
    IEEE Trans. Electron Devices, 55, 5 (2008) 1192-1202
    doi: 10.1109/TED.2008.919382
  7. Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/SiO2/Si structure
    LASZCZ A., RATAJCZAK J., CZERWINSKI A., KATCKI J., SROT V., PHILLIPP F., VAN AKEN P.A., BREIL N., LARRIEU G., DUBOIS E., , , , ,
    Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 154-155 (2008) 175-178
    doi: 10.1016/j.mseb.2008.10.002

Conferences

  1. A 1.2 GHz semi-digital reconfigurable FIR bandpass filter with passive power combiner
    FLAMENT A., FRAPPE A., KAISER A., STEFANELLI B., CATHELIN A., EZZEDDINE H.
    34th European Solid-State Circuits Conference, ESSCIRC 2008, Edinburgh, Scotland, UK, september 15-19
    (2008) 418-421, ISBN 978-1-4244-2361-3
    doi: 10.1109/ESSCIRC.2008.4681881
  2. A 60GHz CMOS RMS power detector for antenna impedance mismatch detection
    GORISSE J., CATHELIN A., KAISER A., KERHERVE E.
    Joint 6th International IEEE Northeast Workshop on Circuits and Systems and TAISA Conference, NEWCAS-TAISA'08, Montreal, Québec, Canada, june 22-25
    (2008) 93-96, ISBN 978-1-4244-2331-6
    doi: 10.1109/NEWCAS.2008.4606329
  3. All-digital RF signal generation for software defined radio
    FRAPPE A., FLAMENT A., STEFANELLI B., CATHELIN A., KAISER A.
    4th European Conference on Circuits and Systems for Communications, ECCSC 2008, Bucharest, Romania, july 10-11
    (2008) 236-239, ISBN 978-1-4244-2419-1
    doi: 10.1109/ECCSC.2008.4611684
  4. An all-digital ΔΣ RF signal generator for mobile communication transmitters in 90nm CMOS
    FRAPPE A., STEFANELLI B., FLAMENT A., KAISER A., CATHELIN A.
    IEEE Radio Frequency Integrated Circuits Symposium, IEEE RFIC 2008, Atlanta, GA, USA, june 15-17
    (2008) 13-16, ISBN: 978-1-4244-1808-4
    doi: 10.1109/RFIC.2008.4561375
  5. Investigation on the platinum silicide Schottky barrier height modulation using a dopant segregation approach
    BREIL N., HALIMAOUI A., DUBOIS E., LAMPIN E., GODET L., PAPASOULIOTIS G., LARRIEU G., SKOTNICKI T.
    Materials Research Society Spring Meeting, MRS Spring 2008, Symposium E : Doping Engineering for Front-End Processing, San Francisco, CA, USA, march 24-28
    Mater. Res. Soc. Symp. Proc., 1070 (2008) 85-90
    http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=12446&DID=212716
  6. NANOSIL Network of Excellence : silicon-based nanostructures and nanodevices for long-term nanoelectronics applications
    BALESTRA F., PARKER E., LEADLEY D., MANTL S., DUBOIS E., ENGSTROM O., CLERC R., CRISTOLOVEANU S., KURZ H., RASKIN J.P., LEMME M., IONESCU A., KASPER E., KARMOUS A.,, BAUS M., SPANGENBERG B., OSTLING M., SANGIORGI E., GHIBAUDO G., FLANDRE D.,
    European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, Strasbourg, France, may 26-30
    Mater. Sci. Semicond. Process., 11, 5 (2008) 148-159
    doi: 10.1016/j.mssp.2008.09.017
  7. Reconfigurable complex digital Delta-Sigma modulator synthesis for digital wireless transmitters
    NZEZA C.N., FLAMENT A., FRAPPE A., KAISER A., CATHELIN A., MULLER J.
    4th European Conference on Circuits and Systems for Communications, ECCSC 2008, Bucharest, Romania, july 10-11
    (2008) 320-325, ISBN 978-1-4244-2419-1
    doi: 10.1109/ECCSC.2008.4611701
  8. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications
    RATAJCZAK J., LASZCZ A., CZERWINSKI A., KATCKI J., PHILLIPP F., VAN AKEN P.A., RECKINGER N., DUBOIS E., , , , , , ,
    XIII International Conference on Electron Microscopy, EM'2008, Cracow-Zakopane, Poland, june 8-11
    J. Microsc., 237, 3 (2010) 379-383
    doi: 10.1111/j.1365-2818.2009.03264.x

– – – – 2007 – – – –

Articles

  1. A switchable-order Gm-C baseband filter with wide digital tuning for configurable radio receivers
    CHAMLA D., KAISER A., CATHELIN A., BELOT D.
    IEEE J. Solid-State Circuits, 42, 7 (2007) 1513-1521
    doi: 10.1109/JSSC.2007.899125
  2. Complete system for wireless powering and remote control of electrostatic actuators by inductive coupling
    BASSET P., KAISER A., LEGRAND B., COLLARD D., BUCHAILLOT L.
    IEEE-ASME Trans. Mechatron., 12, 1 (2007) 23-31
    doi: 10.1109/TMECH.2006.886245
  3. Kinetics, stoichiometry, morphology and current drive capabilities of Ir-based silicides
    LARRIEU G., DUBOIS E., WALLART X., KATCKI J.
    J. Appl. Phys., 102, 9 (2007) 094504-1-7
    doi: 10.1063/1.2802564
  4. Molecular dynamics simulation of the recrystallization of amorphous Si layers : comprehensive study of the dependence of the recrystallization velocity on the interatomic potential
    KRZEMINSKI C., BRULIN Q., CUNY V., LECAT E., LAMPIN E., CLERI F.
    J. Appl. Phys., 101, 12 (2007) 123506/1-11
    doi: 10.1063/1.2743089
  5. Selective etching of Pt with respect to PtSi using a sacrificial low temperature germanidation process
    BREIL N., HALIMAOUI A., SKOTNICKI T., DUBOIS E., LARRIEU G., LASZCZ A., RATAJCZAK J., ROLLAND G., POUYDEBASQUE A.
    Appl. Phys. Lett., 91, 23 (2007) 232112-1-3
    doi: 10.1063/1.2821143
  6. Silicon dry oxidation kinetics at low temperature in the nanometric range: modeling and experiment
    KRZEMINSKI C., LARRIEU G., PENAUD J., LAMPIN E., DUBOIS E.
    J. Appl. Phys., 101, 6 (2007) 064908-1-8
    doi: 10.1063/1.2711764
  7. Spacer-first damascene-gate FinFET architecture featuring stringer-free integration
    CORNU-FRULEUX F., PENAUD J., DUBOIS E., CORONEL P., LARRIEU G., SKOTNICKI T.
    IEEE Electron Device Lett., 28, 6 (2007) 523-526
    doi: 10.1109/LED.2007.897443
  8. X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001)
    AGUIRRE-TOSTADO F.S., LAYTON D., HERRERA-GOMEZ A., WALLACE R.M., ZHU J., LARRIEU G., MALDONADO E., KIRK W.P., TAO M.
    J. Appl. Phys., 102, 8 (2007) 084901-1-7
    doi: 10.1063/1.2794858

Conferences

  1. 80 GHz low noise amplifiers in 65 nm CMOS SOI
    MARTINEAU B., CATHELIN A., DANNEVILLE F., KAISER A., DAMBRINE G., LEPILLIET S., GIANESELLO F., BELOT D., , , , , , ,
    33rd European Solid-State Circuits Conference, ESSCIRC2007, Munich, Germany, september 11-13
    (2007) 348-351
    doi: 10.1109/ESSCIRC.2007.4430315
  2. A 2GHz 0.25µm SiGe BiCMOS oscillator with flip-chip mounted BAW resonator
    RAZAFIMANDIMBY S., CATHELIN A., LAJOINIE J., BELOT D., KAISER A.
    IEEE International Solid-State Circuits Conference, ISSCC 2007, San Francisco, CA, USA, february 11-15
    (2007) 580-581
    doi: 10.1109/ISSCC.2007.373553
  3. An original selective etch of Pt vs PtSi using a low temperature germanidation process
    BREIL N., HALIMAOUI A., DUBOIS E., LARRIEU G., RATAJCZAK J., ROLLAND G., POUYDEBASQUE A., SKOTNICKI T.
    211th Electrochemical Society Meeting, Chicago, IL, USA, may 6-10
    (2007)
  4. Digital tuning of an analog tunable bandpass BAW-filter at GHz frequency
    RAZAFIMANDIMBY S., TILHAC C., CATHELIN A., KAISER A., BELOT D.
    33rd European Solid-State Circuits Conference, ESSCIRC2007, Munich, Germany, september 11-13
    (2007) 218-221
    doi: 10.1109/ESSCIRC.2007.4430284
  5. Direct digital RF signal generation for software-defined radio transmitters using reconfigurable delta-sigma modulators
    NSIALA-NZEZA C., FRAPPÉ A., GORISSE J., FLAMENT A., STEFANELLI B., CATHELIN A., KAISER A.
    11th International Symposium on Microwave and Optical Technology, ISMOT-2007, Monte Porzio Catone, Italy, december 17-21
    (2007) 221-224
  6. Dual silicide integration of low Schottky-barrier source-drain in a spacer-first damascene-metal-gate FinFET architecture
    CORNU-FRULEUX F., PENAUD J., DUBOIS E., CORONEL P., LARRIEU G., BREIL N., DELILLE D., SKOTNICKI T.
    12th Silicon Nanoelectronics Workshop, SNW 2007, Kyoto, Japan, june 10-11
    (2007)
  7. Erbium silicide formation under ultra high vacuum
    BREIL N., DUBOIS E., MORAND Y., CARRON V., HALIMAOUI A., SKOTNICKI T.
    16th European Workshop on Materials for Advanced Metallization, MAM 2007, Bruges, Belgium, march 4-7
    (2007)
  8. Impact of n-type channel implantation on performance of p-type Schottky barrier MOSFETs
    BREIL N., DUBOIS E., POUYDEBASQUE A., SKOTNICKI T.
    12th Silicon Nanoelectronics Workshop, SNW 2007, Kyoto, Japan, june 10-11
    (2007)
  9. Investigations of high frequency performance of Schottky-barrier MOSFETs
    VALENTIN R., DUBOIS E., RASKIN J.P., DAMBRINE G., LARRIEU G., BREIL N., DANNEVILLE F., , , , , , , ,
    7th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2007, Long Beach, CA, USA, january 10-12
    (2007) 32-35, ISBN 978-0-7803-9764-4
    doi: 10.1109/SMIC.2007.322762
  10. Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs
    LARRIEU G., DUBOIS E., VALENTIN R., BREIL N., DANNEVILLE F., DAMBRINE G., PESANT J.C., , , , , , , ,
    IEEE International Electron Devices Meeting, IEDM 2007, Washington, DC, USA, december 10-12
    (2007) 147-150, ISBN 978-1-4244-1508-3
    doi: 10.1109/IEDM.2007.4418886
  11. Reconfigurable digital delta-sigma modulator synthesis for digital wireless transmitters
    NSIALA-NZÉZA C., GORISSE J., FRAPPÉ A., FLAMENT A., KAISER A., CATHELIN A.
    18th European Conference on Circuit Theory and Design, ECCTD'07, Sevilla, Spain, august 26-30
    (2007) 480-483
  12. Systematic offset detection and evaluation using hierarchical graph-based sizing and biasing
    ISKANDER R., LOUERAT M.M., KAISER A.
    50th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS'07, Montreal, Canada, august 5-8
    (2007) 984-987
  13. TEM study of the silicidation process in Pt/Si and Ir/Si structures
    LASZCZ A., RATAJCZAK J., CZERWINSKI A., KATCKI J., BREIL N., LARRIEU G., DUBOIS E.
    15th International Conference on Microscopy of Semiconducting Materials, MSMXV, Cambridge, UK, april 2-5
    (2007)
  14. A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes : influence of direct quantum tunnelling and temperature
    PASCUAL E., RENGEL R., RECKINGER N., TANG X., BAYOT V., DUBOIS E., MARTIN M.J., , , , , , , ,
    15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS-15, Tokyo, Japan, july 23-27
    Phys. Status Sol. C, Curr. Top. Solid State Phys., 5, 1 (2008) 119-122
    doi: 10.1002/pssc.200776519

– – – – 2006 – – – –

Articles

  1. Coupled-resonator micromechanical filters with voltage tunable bandpass characteristic in thickfilm polysilicon technology
    GALAYKO D., KAISER A., LEGRAND B., BUCHAILLOT L., COMBI C., COLLARD D.
    Sens. Actuator A-Phys., 126, 1 (2006) 227-240
    doi: 10.1016/j.sna.2005.10.033
  2. Diffusion of boron in silicon : compatibility of empirical molecular dynamics with continuum simulations
    CUNY V., BRULIN Q., LAMPIN E., LECAT E., KRZEMINSKI C., CLERI F.
    EPL-Europhys. Lett., 76, 5 (2006) 842-848
    doi: 10.1209/epl/i2006-10334-y
  3. Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices
    TANG X., RECKINGER N., BAYOT V., KRZEMINSKI C., DUBOIS E., VILLARET A., BENSAHEL D.C.
    IEEE Trans. Nanotechnol., 5, 6 (2006) 649-656
    doi: 10.1109/TNANO.2006.883481
  4. TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate
    LASZCZ A., KATCKI J., RATAJCZAK J., TANG X., DUBOIS E.
    J. Microsc., 224, 1 (2006) 38-41
    doi: 10.1111/j.1365-2818.2006.01653.x

Conferences

  1. [Invited] Integration and performance of Schottky junction SOI devices
    DUBOIS E., LARRIEU G.
    6th International Workshop on Junction Technology, IWJT-2006, Shanghai, China, may 15-16
    (2006) 153-159
    http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1669469
  2. A wideband LNA for wireless multistandard receiver in 130nm CMOS SOI process
    MARTINEAU B., TINELLA C., GIANESELLO F., CATHELIN A., BELOT D., DANNEVILLE F., KAISER A., , , , , , , ,
    2nd Conference on Research in Microelectronics and Electronics, IEEE PRIME 2006, Otranto, Italy, june 12-15
    (2006) 449-452
    http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1689990
  3. All digital RF signal generation for software defined radio
    FRAPPÉ A., FLAMENT A., STEFANELLI B., CATHELIN A., KAISER A.
    3rd IEEE International Conference on Circuits and Systems for Communications, ICCSC'06, Bucharest, Romania, july 6-7
    (2006) 171-174
  4. An electronically tunable bandpass BAW-filter for a zero-IF WCDMA receiver
    RAZAFIMANDIMBY S., TILHAC C., CATHELIN A., KAISER A., BELOT D.
    32nd European Solid-State Circuits Conference, ESSCIRC 2006, Montreux, Switzerland, september 19-21
    (2006) 142-145
    doi: 10.1109/ESSCIR.2006.307551
  5. Convertisseur numérique analogique 1 bit à 7,8Gech/s pour émetteurs RF numériques en technologie CMOS 90nm
    FLAMENT A., FRAPPÉ A., STEFANELLI B., KAISER A., CATHELIN A.
    7ème Colloque sur le Traitement Analogique de l'Information, du Signal et ses Applications, TAISA'2006, Strasbourg, France, 19-20 octobre
    (2006) 115-118
  6. Design techniques for very high speed digital delta-sigma modulators aimed at all-digital RF transmitters
    FRAPPÉ A., FLAMENT A., STEFANELLI B., KAISER A., CATHELIN A.
    13th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2006, Nice, France, december 10-13
    (2006) 1113-1116
    doi: 10.1109/ICECS.2006.379634
  7. Digital tuning of Gm-C baseband filters in configurable radio receivers
    CHAMLA D., CATHELIN A., DEDIEU S., KAISER A.
    32nd European Solid-State Circuits Conference, ESSCIRC 2006, Montreux, Switzerland, september 19-21
    (2006) 340-343
    doi: 10.1109/ESSCIR.2006.307600
  8. Fabrication and analysis of CMOS fully-compatible high conductance impact-ionization MOS (I-MOS) transistors
    CHARBUILLET C., DUBOIS E., MONFRAY S., BOUILLON P., SKOTNICKI T.
    36th European Solid-State Device Research Conference, ESSDERC 2006, Montreux, Switzerland, september 18-22
    (2006) 299-302
    doi: 10.1109/ESSDER.2006.307697
  9. Hierarchical graph-based sizing for analog cells through reference transistors
    ISKANDER R., KAISER A., LOUERAT M.M.
    2nd Conference on Research in Microelectronics and Electronics, IEEE PRIME 2006, Otranto, Italy, june 12-15
    (2006) 321-324
    http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1689961
  10. High current drive in ultra-short impact ionization MOS (I-MOS) devices
    CHARBUILLET C., MONFRAY S., DUBOIS E., BOUILLON P., SKOTNICKI T.
    International Electron Device Meeting, IEDM 2006, San Francisco, CA, USA, december 11-13
    (2006) 1-4
    doi: 10.1109/IEDM.2006.346983
  11. Influence of gate offset spacer width on SOI MOSFETs HF properties
    VALENTIN R., SILIGARIS A., PAILLONCY G., DUBOIS E., DAMBRINE G., DANNEVILLE F., , , , , , , , ,
    IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, CA, USA, january 18-20
    (2006) 77-80
    doi: 10.1109/SMIC.2005.1587911
  12. Iridium silicide : a promising electrode for metallic source/drain in decananometer MOSFETs
    LARRIEU G., DUBOIS E., WALLART X., KATCKI J.
    210th Meeting of the Electrochemical Society, Cancun, Mexico, october 29-november 3
    Trans. Electrochem. Soc., 3, 2 (2006) 123-129, non réferencé dans ISI Web of Knowledge
    doi: 10.1149/1.2356271
  13. Optimizing resistances and capacitances of a continuous-time ΣΔ ADC
    DE LAMARRE L., LOUERAT M.M., KAISER A.
    13th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2006, Nice, France, december 10-13
    (2006) 419-422
    doi: 10.1109/ICECS.2006.379814
  14. Remote actuation of independant electrostatic distributed micromechanical systems (DMMS) for a wireless microrobot
    BASSET P., BUCHAILLOT L., COLLARD D., KAISER A.
    32nd Annual Conference of the IEEE Industrial Electronics Society, IEEE IECON'06, Paris, France, november 7-10
    (2006) 3078-3083
    doi: 10.1109/IECON.2006.347739
  15. TEM study of PtSi contacts layers for low Schottky barrier MOSFETs
    LASZCZ A., KATCKI J., RATAJCZAK J., CZERWINSKI A., BREIL N., LARRIEU G., DUBOIS E.
    European Material Research Society Spring Meeting, E-MRS - IUMRS - ICEM 06, Si-based Materials for Advanced Microelectronic Devices : Synthesis, Defects and Diffusion, Nice, France, may 29-june 2
    Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms, 253, 1-2 (2006) 274-277
    doi: 10.1016/j.nimb.2006.10.033

Years 2010 – 2013